Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 25A, RDS(ON) = 20mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 32mW @VGS = 4.5V.

文件：1.05706 Mbytes 页数：6 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 7.8 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

文件：322.87 Kbytes 页数：3 Pages

CHENMKO

力勤

CONTENTS

文件：5.88919 Mbytes 页数：24 Pages

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짹15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers

文件：486.38 Kbytes 页数：14 Pages

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