CEZC3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CM3112

150mA/1.2VCMOSLDORegulator

ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50Ωpowergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ

CPH3112

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocesses. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.9mm). •Highallowablepowerdissipation. Applications •Relaydriv

DMN3112S

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(

DMN3112S

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

DMN3112SSS

SINGLEN-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi

DS3112

TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux

DS3112

TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux

DS3112+

TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux

DS3112N

TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux