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DMN3112S

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(

DIODESDiodes Incorporated

达尔科技

DMN3112S

N-CHANNEL ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

ZPSEMI

ZP Semiconductor

DMN3112S-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(

DIODESDiodes Incorporated

达尔科技

DMN3112S-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

ZPSEMI

ZP Semiconductor

DMN3112SQ-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

ZPSEMI

ZP Semiconductor

DMN3112SSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

DMN3112SSS-13

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi

DIODESDiodes Incorporated

达尔科技

3112

CommonModeLineFilters

FRONTIER

Frontier Electronics

3112

FLATWASHERSNYLONFIBRE

[KEYSTONE] NYLONRETAININGWASHERS FLATWASHERS–NYLON&FIBRE INTERNALTOOTHWASHERS STEELLOCKWASHERS STEELFLATWASHERS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

3112

300MHzBandpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

3112

3/8SquareDriveSockets,SAE

etc2List of Unclassifed Manufacturers

etc2未分类制造商

3112

WASHERS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

3112A

TypeKXThermocouple,1Pr#20Sol,PVCInsYel,Red,OS,YellowPVCJkt,300VPLTCITCCMG

ProductDescription TypeKXThermocouple,1Pair20AWG(Solid)Chromel+Alumel,PVCInsulationYel,RedColorCode,OverallBeldfoil®Shield,YellowPVCOuterJacket, PLTCITCCMGAWM2464SUNRESDIRBUR

BELDEN

Belden Inc.

AAT3112

500mAHighEfficiencyChargePumpforWhiteLEDFlashApplications

Features •InputVoltageRange: ▪AAT3112-5.0:2.7Vto5.0V ▪AAT3112-4.5:2.7Vto4.5V •Upto500mAPeakOutputCurrent •200mAContinuousOutputCurrent •IQ

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

AAT3112

500mAHighEfficiencyChargePumpforWhiteLEDFlashApplications

ANALOGICTECHAdvanced Analogic Technologies

研诺科技研诺逻辑科技有限公司

AAT3112

500mAHighEfficiencyChargePumpforWhiteLEDFlashApplications

GeneralDescription TheAAT3112isamemberofAnalogicTechsTotalPowerManagementIC™(TPMIC™)family.Itisadualvoltagedoublingchargepumpthatprovidesaregulatedoutputvoltage.Itoperateswithaninputvoltagerangeof2.7to5.0volts.Thedevicecandeliveraconstant200mAoutput

ANALOGICTECHAdvanced Analogic Technologies

研诺科技研诺逻辑科技有限公司

ACNH3112

HIGHLOADRELAYFORSMARTJ/BBestspacesavingsinitsclass.

PanasonicPanasonic Corporation

松下松下电器

ACNM3112

MIDDLELOADRELAYFORSMARTJ/B

PanasonicPanasonic Corporation

松下松下电器

ADAM-3112

IsolatedStrainGaugeInputModule

ADVANTECHAdvantech Co., Ltd.

研华科技研华科技(中国)有限公司

ADAM-3112

IsolatedStrainGaugeInputModule

ADVANTECHAdvantech Co., Ltd.

研华科技研华科技(中国)有限公司

详细参数

  • 型号:

    DMN3112S

  • 制造商:

    DIODES

  • 制造商全称:

    Diodes Incorporated

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

供应商型号品牌批号封装库存备注价格
DIODES/美台
2019+PB
SOT-23
45000
原装正品 可含税交易
询价
DIODES
08PB
15000
询价
Diodes
20+/21+
SOT-23
9500
全新原装现货
询价
Diodes
22+
SOT-23
45000
原装现货假一赔十
询价
DIODES/美台
22+
SOT-23
354000
询价
DMN3112S
2019+PB
SOT-23
45000
13632880263
询价
DIODES/美台
22+
45000
询价
DIODES/美台
新年份
SOT-23
45000
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
Diodes
2023+
SOT-23
7695
全新原厂原装产品、公司现货销售
询价
DIODES
14+
SOT-23
1530
现货-ROHO
询价
更多DMN3112S供应商 更新时间2024-5-16 10:00:00