Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 125A, RDS(ON) = 3.7 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：513.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 88A, RDS(ON) = 4.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.19635 Mbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 88A, RDS(ON) = 4.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 6.6mW @VGS = 4.5V.

文件：857.8 Kbytes 页数：6 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -93A, RDS(ON) = 5.2 mW @VGS = -10V. RDS(ON) = 8 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：767.94 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -82A, RDS(ON) = 6.5 mW @VGS = -10V. RDS(ON) = 10 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.10581 Mbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 67A, RDS(ON) = 7.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：949.16 Kbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 70A, RDS(ON) = 7.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：1.29875 Mbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 81A, RDS(ON) = 7.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 10mW @VGS = 4.5V.

文件：633.11 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 120V, 90A, RDS (ON) = 7 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：1.06654 Mbytes 页数：6 Pages

CET-MOS

华瑞