P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -93A, RDS(ON) = 5.2 mW @VGS = -10V. RDS(ON) = 8 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：767.94 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -18A,RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：892.36 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -15A, RDS(ON) = 70mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 120mW @VGS = -4.5V. Lead free product is acquired.

文件：893.71 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：370.89 Kbytes 页数：4 Pages

CET

华瑞