CEB05P03资料datasheet下载供应商报价华瑞-114ic电子网

首页 >CEB05P03>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
CEB05P03	文件：892.36 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：892.36 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEB05P03	文件：300 bytes Page：1 Pages	P Channel MOSFET	CET 华瑞	CET
CED05P03	文件：893.71 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -15A, RDS(ON) = 70mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 120mW @VGS = -4.5V. Lead free product is acquired. 文件：893.71 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CED05P03	文件：370.89 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：370.89 Kbytes 页数：4 Pages	CET 华瑞	CET
CEP05P03	文件：485.53 Kbytes Page：5 Pages	Single P-Channel Enhancement Mode MOSFET 文件：485.53 Kbytes 页数：5 Pages	CET 华瑞	CET

更多CEB05P03供应商更新时间2025-10-8 14:08:00