CEZC3P07A规格书批发供应华瑞CET-MOS-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
CEZC3P07A	文件：860.47 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEC3P07A	文件：413.17 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
RD3P07BBH	文件：2.9184 Mbytes Page：13 Pages	Nch100V80APowerMOSFET Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree Application Switching	ROHMRohm 罗姆罗姆半导体集团	ROHM
RX3P07BBH	文件：2.95275 Mbytes Page：13 Pages	Nch100V80APowerMOSFET Features 1)Lowon-resistance 2)Highpowersmallmoldpackage (TO220AB) 3)Pb-freeplating;RoHScompliant 4)100UIStested Application Switching	ROHMRohm 罗姆罗姆半导体集团	ROHM
RX3P07CBH	文件：2.77897 Mbytes Page：13 Pages	Nch100V120APowerMOSFET Features 1)Lowon-resistance 2)Highpowersmallmoldpackage (TO220AB) 3)Pb-freeplating;RoHScompliant 4)100UIStested Application Switching	ROHMRohm 罗姆罗姆半导体集团	ROHM

更多CEZC3P07A供应商更新时间2025-5-29 10:33:00