RD3P07BBH

Marking：RD3P07BBH；Package：TO-252；Nch 100V 80A Power MOSFET

Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree Application Switching

CEC3P07A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEZC3P07A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

RX3P07BBH

Nch100V80APowerMOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage (TO220AB) 3)Pb-freeplating;RoHScompliant 4)100UIStested Application Switching

RX3P07CBH

Nch100V120APowerMOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage (TO220AB) 3)Pb-freeplating;RoHScompliant 4)100UIStested Application Switching