P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -21A, RDS(ON) = 48m W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 62mW @VGS = -4.5V.

文件：785.15 Kbytes 页数：6 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -17A, RDS(ON) = 48mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 65mW @VGS = -4.5V.

文件：1.0221 Mbytes 页数：6 Pages

CET-MOS

华瑞

Ultrahigh-Speed Switching Applications

文件：39.46 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3

Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)

文件：631.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体