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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEZ5175	文件：535.62 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
ACE5175X	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
ACE5175XBNH	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
AD5175	文件：1.033619 Mbytes Page：20 Pages	Single-Channel,1024-Position,DigitalRheostatwithI2CInterfaceand50-TPMemory	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
BX5175	文件：73.67 Kbytes Page：1 Pages	RFAMPLIFIERMODEL	APITECH API Technologies Corp	APITECH
C5175G	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175K	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175V	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
CEB5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23mΩ@VGS=-10V. RDS(ON)=28mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23mΩ@VGS=-10V. RDS(ON)=28mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
EL5175	文件：337.26 Kbytes Page：16 Pages	550MHzDifferentialLineReceivers	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
EL5175	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
EL5175	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
EL5175IS	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿国际（香港）有限公司	CEZ5175	CET(华瑞)	2112+	PR-PACK(5*6)	105000	2500个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
易创佳业科技（深圳）有限公司	CEZ5175	CET/華瑞	23+	PR-PACK(5*6)	22820	原装正品，支持实单	询价
北京京北通宇电子元件有限公司	CEZ5175	CET-MOS	23+	NA	30	现货!就到京北通宇商城	询价
深圳市德力诚信科技有限公司	CEZ5175	CET-MOS	23+	NA	30	现货!就到京北通宇商城	询价
深圳市创新迹电子有限公司	CEZ5175	CET/華瑞	2023+		8700	原装现货	询价
深圳市弘扬芯城科技有限公司	CEZ5175	CET(华瑞)	23+	PRPACK(5x6)	6000		询价
深圳市瑞智芯科技有限公司	CEZ5V6,L3F	Toshiba	21+	n/a	2822	原装正品订货,请确认	询价
深圳市汇莱威科技有限公司	CEZ6515	CET/華瑞		DFN8	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	CEZ6515	CET/華瑞	23+	DFN8	50000	全新原装正品现货,支持订货	询价
深圳市得捷芯城科技有限公司	CEZ6515	CET/華瑞	23+	NA/	3412	原装现货,当天可交货,原型号开票	询价

更多CEZ5175供应商更新时间2024-5-4 15:00:00

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