丝印：LM；Package：SMB；600 Watt Peak Power Zener Transient Voltage Suppressors

The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-e

文件：69.48 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：LM；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：LM；WE-TVSP Power TVS Diode

General Information: It is recommended that the temperature of the component does not exceed +150°C under worst case conditions Operating Temperature -65 up to +150 °C Storage Conditions (in original packaging)

文件：658.77 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：LM；Package：SOT-89；P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology. FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown

文件：57.68 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：LM；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：1.80583 Mbytes 页数：28 Pages

TOSHIBA

东芝

丝印：LM；Package：USC；TOSHIBA Zener Diode Silicon Epitaxial Planar Type

Applications Voltage surge protection Features • Small package • The typical voltage of VZ is accorded to E24 series

文件：2.30154 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：LM；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/

文件：2.31369 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：LM；Package：CFP3；4.1 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 4.1 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximatel

文件：212.58 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LM；Package：CFP3；5.5 W high power voltage regulator diodes

1. General description High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤5.5 W @ Tsp = 75 °C, measured zero lead length • Tolerance series: Approximately

文件：213.43 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：LM；Package：P0008E；LM1949 Injector Drive Controller

1FEATURES 2• Low Voltage Supply (3V–5.5V) • 22 mA Output Drive Current • No RFI Radiation • Adaptable to All Injector Current Levels • Highly Accurate Operation • TTL/CMOS Compatible Input Logic Levels • Short Circuit Protection • High Impedance Input • Externally Set Holding Current, IH

文件：766.24 Kbytes 页数：17 Pages

TI

德州仪器