丝印：LM；Package：SOT-89；P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology. FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown

文件：57.68 Kbytes 页数：12 Pages

PHI

PHI

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION\nP-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.FEATURES\n• Very low RDS(on)\n• Direct interface to C-MOS\n• High-speed switching\n• No second breakdown • Very low RDS(on)\n• Direct interface to C-MOS\n• High-speed switching\n• No second breakdown;

恩XP

BeSTMOS

BlueSilicon

蓝矽

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

文件：115.69 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

文件：50.68 Kbytes 页数：3 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

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MOSPEC

统懋