CEZC6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CHM6601JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CJL6601

P-channelandN-channelComplementaryMOSFETS

CJQ6601

N-channelandP-channelComplementaryMOSFETS

DMG6601LVT

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

DMG6601LVT

NandP-ChannelEnhancementModePowerMOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)

E6601A

CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments

EFC6601R

Lithium-ionbatterycharginganddischargingswitch

Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM

EFC6601R

N-ChannelPowerMOSFET

Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM

EFC6601R-TR

N-ChannelPowerMOSFET

Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM