N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 43A, RDS(ON) = 8.4mW @VGS = 10V. RDS(ON) = 13mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

20-30GHz High Power Amplifier

Description The CHA4092 is a high gain broadband three stage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. Main Features ■ Broadband performances : 20-30GHz ■ 22 dBm output power ( 1dB gain comp. ) ■ 17

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UMS

2.0A, 2-4 cell lithium battery switching charger

文件：759.55 Kbytes 页数：14 Pages

HMSEMI

华之美半导体

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

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Intersil