P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：345.33 Kbytes 页数：4 Pages

CET

华瑞

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.035069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：420.2 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode MOSFET

‘GENERAL FEATURES * Vos=-60V b =-4A * Roson

文件：1.9001 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.8A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：653.42 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：519.51 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：647.27 Kbytes 页数：4 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. ■ -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

文件：394.69 Kbytes 页数：7 Pages

CET

华瑞

N- and P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

文件：1.18677 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 4.1A, RDS(ON) = 68mW @VGS = 10V. FEATURES RDS(ON) = 86mW @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：796.54 Kbytes 页数：7 Pages

CET-MOS

华瑞