丝印：CEM；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

丝印：CEM；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 页数：4 Pages

JUXING

广东钜兴电子

丝印：CEM；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：CEM；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 页数：4 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：614.08 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 2A, RDS(ON) = 440mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：782.81 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 1.8A, RDS(ON) = 460mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 515mW @VGS = 5V. RDS(ON) = 530mW @VGS = 3V.

文件：485.52 Kbytes 页数：5 Pages

CET-MOS

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.6A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：418.53 Kbytes 页数：4 Pages

CET-MOS

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：751.7 Kbytes 页数：4 Pages

CET

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.6A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 190mW @VGS = 5V. RDS(ON) = 220mW @VGS = 3V.

文件：468.14 Kbytes 页数：5 Pages

CET-MOS

华瑞