N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 1.8A, RDS(ON) = 460mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 515mW @VGS = 5V. RDS(ON) = 530mW @VGS = 3V.

文件：485.52 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Surface mount, silver (Ag) coated ceramic duplexer.

文件：152.69 Kbytes 页数：2 Pages

CTS

西迪斯

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-223 package.

文件：623.64 Kbytes 页数：4 Pages

CET

华瑞

1.9A HIGH SPEED SINGLE GATE DRIVER

Features Efficient Low Cost Solution for Driving MOSFETs and IGBTs Wide Supply Voltage Operating Range: 4.5V to 18V 1.9A Source / 1.8A Sink Output Current Capability Inverting and Non-Inverting Input Configurations Fast Propagation Delay (35ns typ) Fast Rise and Fall Times (15ns typ) Logic

文件：655.39 Kbytes 页数：11 Pages

DIODES

美台半导体