N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-223 package.

文件：623.64 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N Channel MOSFET

CET

华瑞

1.9A HIGH SPEED SINGLE GATE DRIVER

Features Efficient Low Cost Solution for Driving MOSFETs and IGBTs Wide Supply Voltage Operating Range: 4.5V to 18V 1.9A Source / 1.8A Sink Output Current Capability Inverting and Non-Inverting Input Configurations Fast Propagation Delay (35ns typ) Fast Rise and Fall Times (15ns typ) Logic

文件：655.39 Kbytes 页数：11 Pages

DIODES

美台半导体

Current Transducer

文件：929.58 Kbytes 页数：12 Pages

LEM

莱姆

Current Transducer

文件：1.33861 Mbytes 页数：15 Pages

LEM

莱姆