CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=95mW@VGS=6V.

CEM0615A

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4.6A,RDS(ON)=65mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM0615L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4.6A,RDS(ON)=65mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=82mW@VGS=4.5V.

CEM0715

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,5.3A,RDS(ON)=48mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. PoE. Telecom. DC/DCconverter. Applications

CEM1008

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.8A,RDS(ON)=125mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM1008SL

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.9A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=130mW@VGS=5V. RDS(ON)=145mW@VGS=3V. Pb-freeleadplating;RoHScompliant. HalogenFree. Applicati

CEM1010

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,9.5A,RDS(ON)=15.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM1010

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,9.5A,RDS(ON)=15.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM11C2

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ●30V,7A,RDS(ON)=30mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. -20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Surface

CEM11M2

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6A,RDS(ON)=25mΩ@VGS=4.5V. RDS(ON)=31mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.