Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 4.6A, RDS(ON) = 65mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：553.86 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 4.6A, RDS(ON) = 65mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 82mW @VGS = 4.5V.

文件：574.68 Kbytes 页数：5 Pages

CET-MOS

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文件：844.22 Kbytes 页数：10 Pages

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统懋