Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.8A, RDS(ON) = 125mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：492.96 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.9A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 145mW @VGS = 3V. Pb-free lead plating ; RoHS compliant. Halogen Free. Applicati

文件：711.75 Kbytes 页数：6 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N Channel MOSFET

CET

华瑞