Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.9A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 145mW @VGS = 3V. Pb-free lead plating ; RoHS compliant. Halogen Free. Applicati

文件：711.75 Kbytes 页数：6 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

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HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

文件：65.379 Kbytes 页数：2 Pages

PANJIT

強茂

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半