CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,4A,RDS(ON)=85mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=6V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=95mW@VGS=6V.

CSHB0415

MoldingPowerChoke

Outline: ▪Magneticshieldedstructure:excellentresistancetoelectro Magmeticinterference(EMI) ▪Acompositestructure,ultralowbuzznoise ▪Lowloss,highefficiency,wideapplicationfrequency ▪Lightweightdesign,savespace,suitableforhighdensitySMT Features： ▪Corematerial:Al

FDSD0415

Lowaudiblecorenoise

FX0415

FUSEHOLDERS

FX0415

PanelMountingTouchproof,PC2

FX0415/S

PanelMountingTouchproof,PC2

FX0415/S

FUSEHOLDERS

FX0415SLASHS

FUSEHOLDERS

FX0415SLASHS

PanelMountingTouchproof,PC2