N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 6V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：406.89 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 4A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(ON) = 95mW @VGS = 6V.

文件：450.59 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Molding Power Choke

Outline: ▪ Magnetic shielded structure:excellent resistance to electro Magmetic interference (EMI) ▪ A composite structure,ultra low buzz noise ▪ Low loss,high efficiency,wide application frequency ▪ Lightweight design,save space,suitable for high density SMT Features： ▪ Core material: Al

文件：854.24 Kbytes 页数：5 Pages

CODACA

科达嘉电子

Low audible core noise

文件：238.62 Kbytes 页数：1 Pages

Toko

Panel Mounting Touchproof, PC2

文件：80.57 Kbytes 页数：1 Pages

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