CEM-1601_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •1.5Vrated •externallydriven

CEM-1606

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •6Vrated •externallydriven

CEM-1606

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •6Vrated •externallydriven

CEM-1606_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •6Vrated •externallydriven

CEM-1612

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •12Vrated •externallydriven

CEM-1612

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •12Vrated •externallydriven

CEM-1612_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES •throughhole •12Vrated •externallydriven

CEM2005

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■20V,5A,RDS(ON)=32mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4A,RDS(ON)=95mΩ@VGS=-4.5V. RDS(ON)=125mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEM2030A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■20V,6A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CEM2082

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,11A,RDS(ON)=12mΩ@VGS=4.5V. RDS(ON)=18mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.