MAGNETIC BUZZER TRANSDUCER

FEATURES • through hole • 12 V rated • externally driven

文件：342.41 Kbytes 页数：3 Pages

CUI

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■ 20V, 5A, RDS(ON) = 32mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 95mΩ @VGS = -4.5V. RDS(ON) = 125mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：849.17 Kbytes 页数：9 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

文件：847.1 Kbytes 页数：9 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：107.11 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：139.59 Kbytes 页数：4 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：379.95 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -10A, RDS(ON) = 18mW @VGS = -4.5V. RDS(ON) = 27mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：755.36 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.0A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 26mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：512.799 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -8.9A, RDS(ON) = 20mW @VGS = -4.5V. RDS(ON) = 30mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：252.2 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：329.68 Kbytes 页数：4 Pages

CET

华瑞