CEM2108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,9.5A,RDS(ON)=14mΩ@VGS=4.5V. RDS(ON)=20mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-10A,RDS(ON)=18mΩ@VGS=-4.5V. RDS(ON)=27mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-10A,RDS(ON)=18mW@VGS=-4.5V. RDS(ON)=27mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM2152

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.0A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=26mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-8.9A,RDS(ON)=20mΩ@VGS=-4.5V. RDS(ON)=30mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM2163

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •BuiltinESDProtectionwithZenerDiode •TypicalESDPerformance:1800V •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableDevices -LoadSwitch -BatterySw

CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-8.9A,RDS(ON)=20mW@VGS=-4.5V. RDS(ON)=30mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM2182

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.3A,RDS(ON)=18mW@VGS=4.5V. RDS(ON)=24mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM2187

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-7.6A,RDS(ON)=22mΩ@VGS=-4.5V. RDS(ON)=32mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM2281

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-7.2A,RDS(ON)=30mΩ@VGS=-4.5V. RDS(ON)=43mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.