P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

文件：1.03126 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：461.72 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：446.1 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 43mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：276.94 Kbytes 页数：4 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -7A, RDS(ON) = 26mW @VGS = -10V. RDS(ON) = 40mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V.

文件：866.83 Kbytes 页数：7 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：617.27 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：410.99 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, -5.3A, RDS(ON) = 45mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：648.94 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. ■ S

文件：621.57 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 7.5A, FEATURES RDS(ON) = 25mW @VGS = 4.5V. - 2 0 V , - 4 A , RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 150mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(O

文件：834.59 Kbytes 页数：7 Pages

CET-MOS

华瑞