CEM300

COM Express Type 10 Development Baseboard

Features ●COMExpressType10baseboard ●2SATA-300andSDcardslot ●1PCIExpressMiniCardslot ●5USB2.0and2USB3.0 ●Port80displayfordebugging

CEM300PG-N3060-4G

COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ●84x55minisizeformfactor ●2GbELAN ●SATAandmSATA ●LVDSandVGA ●6USB2.0 ●2PCIExpressMiniCardslots

CEM300PG-N3160-4G

COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ●84x55minisizeformfactor ●2GbELAN ●SATAandmSATA ●LVDSandVGA ●6USB2.0 ●2PCIExpressMiniCardslots

CEM300PG-N3710-4G

COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ●84x55minisizeformfactor ●2GbELAN ●SATAandmSATA ●LVDSandVGA ●6USB2.0 ●2PCIExpressMiniCardslots

CEM3032

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,18A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3053

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-15A,RDS(ON)=7mΩ@VGS=-10V. RDS(ON)=15mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. ■ESDProtected:4000V

CEM3053A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-16.4A,RDS(ON)=5.8mW@VGS=-10V. RDS(ON)=9.1mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM3053-HF

Marking：4409；Package：SOP-8；MOSFET

Features -Simpledriverequirement -Lowon-resistance -Fastswitchingspeed

CEM3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,14A,RDS(ON)=7.8mΩ@VGS=10V. RDS(ON)=11.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.