COM Express Type 6 Compact Module with Intel® Atom® x5 and x7 Processor

Features ● Intel® Atom® x5 and x7 processors (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM for up to 8GB of memory ● Max. up to 4 lanes of PCI Express ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software ● TPM 1.2 supported (optional)

文件：434.88 Kbytes 页数：1 Pages

AXIOMTEK

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COM Express Type 6 Compact Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM, up to 8GB ● Max. up to 4 lanes of PCIe ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software for industrial IoT applications ● TPM 1.2 supported (

文件：530.3 Kbytes 页数：2 Pages

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COM Express Type 6 Compact Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM, up to 8GB ● Max. up to 4 lanes of PCIe ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software for industrial IoT applications ● TPM 1.2 supported (

文件：530.3 Kbytes 页数：2 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -9.3A, RDS(ON) = 18mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：671.11 Kbytes 页数：5 Pages

CET-MOS

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -8.3A, RDS(ON) = 18mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：675.43 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. ■ 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：509.6 Kbytes 页数：7 Pages

CET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 9A, RDS(ON) = 16mW @VGS = 4.5V. FEATURES -30V, -6A, RDS(ON) = 34mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 20mW @VGS = 2.5V.

文件：1.09952 Mbytes 页数：7 Pages

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COM Express Type 6 Compact Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM, up to 8GB ● Max. up to 4 lanes of PCIe ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software for industrial IoT applications ● TPM 1.2 supported (

文件：530.3 Kbytes 页数：2 Pages

AXIOMTEK

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COM Express Type 6 Compact Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 2 DDR3L-1600 SO-DIMM, up to 8GB ● Max. up to 4 lanes of PCIe ● 2 SATA-600 ● 4 USB 3.0 and 8 USB 2.0 ● AXView 2.0 intelligent remote management software for industrial IoT applications ● TPM 1.2 supported (

文件：530.3 Kbytes 页数：2 Pages

AXIOMTEK

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：104.84 Kbytes 页数：4 Pages

CET

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