CEM3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM3082

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3083

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-13A,RDS(ON)=10mΩ@VGS=-10V. RDS(ON)=15.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM3083A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-13A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15.5mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM310

COM Express Type 10 Development Baseboard

Features ●COMExpressType10baseboard ●2SATA-300andSDcardslot ●1PCIExpressMiniCardslot ●5USB2.0and2USB3.0 ●Port80displayfordebugging

CEM310

COM Express Type 10 Mini Module with Intel Atom® x5 and x7 Processor

Features ●IntelAtom®x5andx7processors(ApolloLake) ●4GBDDR3L/8GBLPDDR4memoryonboard ●Max.upto4lanesofPCIExpress ●2SATA-600 ●2USB3.0and8USB2.0

CEM3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM3108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,10A,RDS(ON)=13mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM3109

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=14mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEM3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,10A,RDS(ON)=14mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS