P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -16.4A, RDS(ON) = 5.8mW @VGS = -10V. RDS(ON) = 9.1mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：782.81 Kbytes 页数：5 Pages

CET-MOS

华瑞

丝印：4409；Package：SOP-8；MOSFET

Features - Simple drive requirement - Low on-resistance - Fast switching speed

文件：532.55 Kbytes 页数：5 Pages

COMCHIP

典琦

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：105.48 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：543.08 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：772.26 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：382.54 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：389.93 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -13A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15.5mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：406.11 Kbytes 页数：5 Pages

CET-MOS

华瑞

COM Express Type 10 Development Baseboard

Features ● COM Express Type 10 baseboard ● 2 SATA-300 and SD card slot ● 1 PCI Express Mini Card slot ● 5 USB 2.0 and 2 USB 3.0 ● Port 80 display for debugging

文件：416.29 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Module with Intel Atom® x5 and x7 Processor

Features ● Intel Atom® x5 and x7 processors (Apollo Lake) ● 4GB DDR3L / 8GB LPDDR4 memory onboard ● Max. up to 4 lanes of PCI Express ● 2 SATA-600 ● 2 USB 3.0 and 8 USB 2.0

文件：512.58 Kbytes 页数：3 Pages

AXIOMTEK

艾讯科技