Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. ■ 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：509.6 Kbytes 页数：7 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

SYNCHRONOUS PWM CONTROLLER FOR TERMINATION POWER SUPPLY APPLICATIONS

文件：281.28 Kbytes 页数：18 Pages

IRF

SYNCHRONOUS PWM CONTROLLER FOR TERMINATION POWER SUPPLY APPLICATIONS

文件：281.28 Kbytes 页数：18 Pages

IRF

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美