CEM4201

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-7.5A,RDS(ON)=28mW@VGS=-10V. RDS(ON)=38mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,7.3A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,7.3A,RDS(ON)=28mW@VGS=10V. RDS(ON)=42mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM4207

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-7A,RDS(ON)=30mΩ@VGS=-10V. RDS(ON)=40mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM4228

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,6.3A,RDS(ON)=30mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4228

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

CEM4228

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,6.3A,RDS(ON)=30mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,6.1A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-5.2A,RDS(ON)=43mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CEM4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,6.1A,RDS(ON)=32mW@VGS=10V. RDS(ON)=46mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=

CEM4269A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,6.0A,RDS(ON)=34mW@VGS=10V. RDS(ON)=49mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V.