N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：252.13 Kbytes 页数：4 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -13.6A, RDS(ON) = 8.4mW @VGS = -10V. RDS(ON) = 12mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：491.07 Kbytes 页数：5 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -8.5A, RDS(ON) = 21.5mW @VGS = -10V. RDS(ON) = 28mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：490.11 Kbytes 页数：5 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.87 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -7.5A, RDS(ON) = 28mW @VGS = -10V. RDS(ON) = 38mW @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：416.92 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：412.61 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 7.3A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 42mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.56 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -7A, RDS(ON) = 30mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：447.15 Kbytes 页数：4 Pages

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.09119 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：109.6 Kbytes 页数：4 Pages

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