CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,6.1A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-4.3A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil

CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

40V,6.1A,RDS(ON)=32mW@VGS=10V. FEATURES RDS(ON)=46mW@VGS=4.5V. -40V,-4.3A,RDS(ON)=66mW@VGS=-10V. RDS(ON)=105mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisa

CEM4282

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,6.6A,RDS(ON)=36mΩ@VGS=10V. RDS(ON)=48mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■SurfacemountPackage.

CEM4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-6A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM4307

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-5A,RDS(ON)=44mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM4308

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,5.8A,RDS(ON)=38mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4311

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM4410

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=13.8mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Surfacemountpackage.