Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 6.3A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 46mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS =

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

文件：565.99 Kbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.0A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V.

文件：1.33561 Mbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. FEATURES RDS(ON) = 46mW @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66mW @VGS = -10V. RDS(ON) = 105mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is a

文件：919.21 Kbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

文件：493.84 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package.

文件：742.53 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -6A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：731.53 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -5A, RDS(ON) = 44mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：582.6 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：245.93 Kbytes 页数：4 Pages

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