Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 46mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS =

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N+P Power MOSFET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.0A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V.

文件：1.33561 Mbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：604 Kbytes 页数：7 Pages

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Dual N & P MOSFET

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