Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.0A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V.

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CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

文件：633.12 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir

文件：804.63 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 40 Volts CURRENT 6.1 Ampere P-channel: VOLTAGE 40 Volts CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo mo

文件：586.36 Kbytes 页数：5 Pages

CHENMKO

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