CEM4435A

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM4435A

P-channel Enhancement Mode Power MOSFET

Features VDS=-30V,ID=-9A RDS(ON)

CEM4435A

Marking：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERALFEATURES| @Vos=-30Vjo=9A| ©Rosczmogesmioy| ®Ros(Ov=35mO@Ves=4.5V|

CEM4481

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.6A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM4487

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.2A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM4532

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

FEATURES ■30V,4.7A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■-30V,-4.5A,RDS(ON)=80mΩ@VGS=-10V. RDS(ON)=135mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEM4539

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■30V,5.8A,RDS(ON)=37mΩ@VGS=10V. RDS(ON)=55mΩ@VGS=4.5V. ■-30V,-4.9A,RDS(ON)=5365mΩ@VGS=-10V. RDS(ON)=95mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CEM4804

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7.9A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=30m@VΩGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM4808

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.