N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter

文件：222.54 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.8A , RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ Surface mount Package.

文件：501.52 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：500.86 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：106.95 Kbytes 页数：4 Pages

CET

华瑞

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

文件：1.00479 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 33mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：527.4 Kbytes 页数：5 Pages

CET-MOS

华瑞

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | © Rosczmogesmioy | ® Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -9A RDS(ON)

文件：1.85515 Mbytes 页数：5 Pages

Bychip

百域芯

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -4.6A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：393.18 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：419.65 Kbytes 页数：4 Pages

CET

华瑞