CEM4435

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4435A

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM4435A

P-channel Enhancement Mode Power MOSFET

Features VDS=-30V,ID=-9A RDS(ON)

CEM4435A

Marking：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERALFEATURES| @Vos=-30Vjo=9A| ©Rosczmogesmioy| ®Ros(Ov=35mO@Ves=4.5V|

CEM4435A

P-Channel MOSFET uses advanced trench technology

CEM4435A_10

P-Channel Enhancement Mode Field Effect Transistor