Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

FEATURES ■ 30V , 4.7A , RDS(ON)=55mΩ @VGS=10V. RDS(ON)=85mΩ @VGS=4.5V. ■ -30V , -4.5A , RDS(ON)=80mΩ @VGS=-10V. RDS(ON)=135mΩ @VGS=-4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：84.48 Kbytes 页数：8 Pages

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Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ -30V, -4.9A, RDS(ON) = 5365mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

文件：847.61 Kbytes 页数：9 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m @V Ω GS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：54.91 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：383.62 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

文件：501.82 Kbytes 页数：5 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.1A, RDS(ON) = 120mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：109.43 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.1A, RDS(ON) = 120mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：894.71 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. -3.6A, RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package

文件：499.89 Kbytes 页数：5 Pages

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Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05753 Mbytes 页数：9 Pages

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微碧半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package

文件：111.2 Kbytes 页数：4 Pages

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