CEM4410A

N-Channel Enhancement Mode Field Effect Transistor

N-ChannelEnhancementModeFieldEffectTransistor

CEM4412

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4412

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4412S1

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4412-XA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4416

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9A,RDS(ON)=18mΩ@VGS=10V.RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4426

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •Optimizedfor“LowSide”Synchronous RectifierOperation •100%RgandUISTested APPLICATIONS •CCFLInverter

CEM4431

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-5.8A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■SurfacemountPackage.

CEM4435

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.