P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -13.6A, RDS(ON) = 8.4mW @VGS = -10V. RDS(ON) = 12mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：491.07 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

AND GATES

DESCRIPTION TheHCC4073B, HCC4081BandHCC4082B(extended temperature range) and the HCF4073B, HCF4081BandHCF4082B(intermediate tempera ture range) are monolithic integrated circuits avail-able in 14-lead dual in-line plastic or ceramic package and plastic micro package. 4073B TRIPLE 3–INPUT AND GAT

文件：271.6 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RadHardened high voltage complementary MOS logic series

文件：141.35 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Rad-hard, high voltage, CMOS logic series

Features • ESCC qualified • 18 V Absolute maximum ratings • 3 V to 15 V operating voltage • Hermetic packages • Rad-hard 100 krad (Si) TID • SEL immune up to 119 MeV.cm²/mg • SEU immune up to 119 MeV.cm²/mg • -55 °C to +125 °C temperature range • ESCC specification available on ESCC websi

文件：336.95 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体