P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -7A, RDS(ON) = 30mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：447.15 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJNS3207R

文件：37.41 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

POW-R-BLOK Dual SCR / Diode Isolated Module (700 Amperes / Up to 1800 Volts)

Description: Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. Features: ■ Electrically Isolated Heatsinking ■ Compression Bonded Elements ■

文件：98.66 Kbytes 页数：5 Pages

POWEREX

1-A Dual-HBD (Dual-Half-Bridge Driver)

Description The TLE 4207 is a fully protected Dual-Half-Bridge-Driver designed specially for automotive and industrial motion control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. Features • Delivers up to 0.8 A continuous • Optimize

文件：147.19 Kbytes 页数：14 Pages

SIEMENS

西门子