Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：751.7 Kbytes 页数：4 Pages

CET

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.6A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：418.53 Kbytes 页数：4 Pages

CET-MOS

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.6A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 190mW @VGS = 5V. RDS(ON) = 220mW @VGS = 3V.

文件：468.14 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞