CEM6056L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CEM6072AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,12.5A,RDS(ON)=10mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6078

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V,10.4A,RDS(ON)=11.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications DC-DCconverters. Synchronousrectification.

CEM6080

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■60V,5.6A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■-60V,-3.3A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=180mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CEM6086

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6086L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM6088

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,9.5A,RDS(ON)=12.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM6088

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,9.5A,RDS(ON)=12.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6088L

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,9.0A,RDS(ON)=14.5mW@VGS=10V. RDS(ON)=18.0mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CEM6088L

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,9.0A,RDS(ON)=14.5mW@VGS=10V. RDS(ON)=18.0mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.