P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -5.7A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 68mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：782.97 Kbytes 页数：5 Pages

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华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 68mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：670.27 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.7A, RDS(ON) = 66mW @VGS = 10V. RDS(ON) = 85mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：600.94 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：415.57 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：413.2 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.1A, RDS(ON) = 68mW @VGS = 10V. RDS(ON) = 86mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：601.42 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-ChannelEnhancement Mode Power MOSFET

GENERAL FEATURES * Vos=B0VIo=6A + Rosin

文件：2.12733 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 4.5A, RDS(ON) = 55mW @VGS = 10V. FEATURES RDS(ON) = 72mW @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：894.83 Kbytes 页数：7 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：600.8 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：656.62 Kbytes 页数：4 Pages

CET

华瑞