Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 4.5A, RDS(ON) = 55mW @VGS = 10V. FEATURES RDS(ON) = 72mW @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：894.83 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

ULTRA THIN MCP ASSEMBLY WITH CENTER HOLE

FEATURES ● Ultra Thin Type: 2.5 mm (Max.) • Detection at closed distance from samples ● Flexible Lead Out (polymide film) • Easy system design with a flexible wiring • Low outguessing for high vacuum operation ● Light Weight APPLICATIONS ● SEM ● FIB System ● Mask Aligner ● Elec

文件：156.34 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

RF AMPLIFIER MODEL

文件：71.07 Kbytes 页数：1 Pages

APITECH

DC 4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK

[Stanford-Microdevices] Product Description Stanford Microdevices SGA-6589 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz.

文件：567.76 Kbytes 页数：8 Pages

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