RN6589

RF AMPLIFIER MODEL

BGA6589

MMICwidebandmediumpoweramplifier

BGA6589

MMICwidebandmediumpoweramplifier

BGA6589

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BR6589

RFAMPLIFIERMODEL

CEM6589

DualEnhancementModeFieldEffectTransistor(NandPChannel)

60V,4.5A,RDS(ON)=55mW@VGS=10V. FEATURES RDS(ON)=72mW@VGS=4.5V. -60V,-3.1A,RDS(ON)=130mW@VGS=-10V. RDS(ON)=170mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

F6589

ULTRATHINMCPASSEMBLYWITHCENTERHOLE

FEATURES ●UltraThinType:2.5mm(Max.) •Detectionatcloseddistancefromsamples ●FlexibleLeadOut(polymidefilm) •Easysystemdesignwithaflexiblewiring •Lowoutguessingforhighvacuumoperation ●LightWeight APPLICATIONS ●SEM ●FIBSystem ●MaskAligner ●Elec

SGA-6589

DC4000MHZSILICONGERMANIUMHBTCASCADEABLEGAINBLOCK

[Stanford-Microdevices] ProductDescription StanfordMicrodevicesSGA-6589isahighperformancecascadeable50-ohmamplifier.ThisRFICusesthelatestSiliconGermaniumHeterostructureBipolarTransistor(SiGeHBT)processfeaturing1micronemitterswithFTupto50GHz.

SGA-6589

DC-3500MHz,CascadableSiGeHBTMMICAmplifier

ProductDescription TheSGA-6589isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationof

SGA6589Z

DCto3500MHz,CASCADABLELOWNOISE,HIGHGAINSiGeHBT