CEM7350

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=10V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. Leadfreeproductisacquired.

CEM7350L

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=5V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. RDS(ON)=180mW@VGS=10V. Lead-freeplating;RoHScompliant.

CEM7350L

Dual Enhancement Mode Field Effect Transistor

FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=5V. RDS(ON)=180mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mW@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplati

CEM7808

Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.2A,RDS(ON)=33mΩ@VGS=10V. RDS(ON)=60mΩ@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CEM7808

Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel)

30V,6.2A,RDS(ON)=33mW@VGS=10V. FEATURES RDS(ON)=60mW@VGS=4.5V. -30V,-4.8A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM8206

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

CEM8207

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●20V,6A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM8208

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,7A,RDS(ON)=22mΩ@VGS=4.5V. RDS(ON)=32mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. ■ESDProtected:2000V

CEM8208

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,7A,RDS(ON)=22mW@VGS=4.5V. RDS(ON)=32mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. ESDProtected:2000V

CEM8311

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-7.9A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.