N-Channel Enhancement Mode Field Effect Transistor

20V, 10A, RDS(ON) = 13mW @VGS = 4.5V. FEATURES RDS(ON) = 20mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：477.05 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -2.5A, RDS(ON) = 250mΩ @VGS = -10V. RDS(ON) = 400mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：497.11 Kbytes 页数：5 Pages

CET

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COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

AXIOMTEK

艾讯科技

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -30V, -3.4A, RDS(ON) = 130mΩ @VGS = -10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：491.11 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode MOSFET

FEATURES ● -60V, -3A, RDS(ON) = 150mΩ @VGS = -10V. RDS(ON) = 240mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：495.93 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：109.09 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.7A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 165mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：537.98 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：496.08 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：502.04 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：500.61 Kbytes 页数：5 Pages

CET

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