P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -7.7A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 48mΩ @VGS = -2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：500.93 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V, 10A, RDS(ON) = 13.5mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：499.05 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode MOSFET

FEATURES ● -20V, -5.8A, RDS(ON) = 50mΩ @VGS = -10V. -2A, RDS(ON) = 90mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：497.81 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode MOSFET

FEATURES ● -20V, -5.8A, RDS(ON) = 50mΩ @VGS = -10V. -2A, RDS(ON) = 90mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：497.81 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -5.4A, RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 100mΩ @VGS = -2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：498.57 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：496.2 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：815.02 Kbytes 页数：4 Pages

CET-MOS

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P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：499.65 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：106.99 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.2A, RDS(ON) = 38mW @VGS = 10V. RDS(ON) = 52mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：264.76 Kbytes 页数：4 Pages

CET-MOS

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