CEM9925

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,5A,RDS(ON)=465mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM9926

Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage.

CEM9926

Dual N-Channel Enhancement Mode MOSFET

Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit

CEM9926

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM9926A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM9926A

Marking：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS(V)=20V ID=7A RDS(ON)

CEM9926A

Marking：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS(V)=20V ID=7A RDS(ON)

CEM9935A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,6.0A,RDS(ON)=36mW@VGS=10V. RDS(ON)=42mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=75mW@VGS=2.5V. Leadfreeproductisacquired.

CEM9939A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■30V,7A,RDS(ON)=30mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■-30V,-3.5A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=160mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability.

CEM9945

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,3.3A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=200mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.