Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -20V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. -1A, RDS(ON) = 190mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：497.85 Kbytes 页数：5 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

文件：1.64528 Mbytes 页数：10 Pages

CET

华瑞

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：500.84 Kbytes 页数：5 Pages

CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.5A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 130mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：898.07 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 50V, 3A, RDS(ON) = 130mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：500.35 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：502.16 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

文件：1.027069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

双N沟道增强型场效应晶体管

文件：63.668 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PDF上传者：深圳市金亿隆电子科技有限公司

N-Channel MOSFET uses advanced trench technology

文件：1.46176 Mbytes 页数：6 Pages

DOINGTER

杜因特

Electret Condenser Microphone(Omnidirectional)

文件：462.37 Kbytes 页数：1 Pages

CITIZEN

西铁城电子株式会社