Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：743.28 Kbytes 页数：4 Pages

CET

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.4A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：717.16 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.46176 Mbytes 页数：6 Pages

DOINGTER

杜因特

N Channel MOSFET

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Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

文件：795.1 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel Product

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N Channel MOSFET

CET

华瑞